IRFM120A bv dss = 100 v r ds(on) = 0.2 ! i d = 2.3 a 100 2.3 1.84 18 " 20 123 2.3 0.24 6.5 2.4 0.019 - 55 to +150 300 52 -- ! avalanche rugged technology ! rugged gate oxide technology ! lower input capacitance ! improved gate charge ! extended safe operating area ! lower leakage current : 10 # a (max.) @ v ds = 100v ! lower r ds(on) : 0.155 ! (typ.) features sot-223 * when mounted on the minimum pad size recommended (pcb mount). thermal resistance junction-to-ambient r $ ja % /w characteristic max. units symbol typ. * absolute maximum ratings drain-to-source voltage continuous drain current (t a =25 % ) continuous drain current (t a =70 % ) drain current-pulsed & gate-to-source voltage single pulsed avalanche energy ' avalanche current & repetitive avalanche energy & peak diode recovery dv/dt ( total power dissipation (t a =25 % ) linear derating factor operating junction and storage temperature range maximum lead temp. for soldering purposes, 1/8? from case for 5-seconds characteristic value units symbol i dm v gs e as i ar e ar dv/dt i d t j , t stg t l a v mj a mj v/ns w w/ % a % v dss v * p d * 2014-8-8 1 www.kersemi.com
100 -- 2.0 -- -- -- -- -- -- 0.12 -- -- -- -- -- -- 95 38 14 14 36 28 16 2.7 7.8 -- -- 4.0 100 -100 1 10 100 0.2 -- 480 110 45 40 40 90 70 22 -- -- 3.12 370 -- -- -- 98 0.34 2.3 18 1.5 -- -- notes ; & repetitive rating : pulse width limited by maximum junction temperature ' l=35mh, i as =2.3a, v dd =25v, r g =27 ) , starting t j =25 % ( i sd * 9.2a, di/dt * 300a/ # s, v dd * bv dss , starting t j =25 % + pulse test : pulse width = 250 # s, duty cycle * 2% , essentially independent of operating temperature - adjusted for cisco electrical characteristics (t a =25 % unless otherwise specified) drain-source breakdown voltage breakdown voltage temp. coeff. gate threshold voltage gate-source leakage , forward gate-source leakage , reverse characteristic symbol max. units typ. min. test condition static drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain(?miller?) charge g fs c iss c oss c rss t d(on) t r t d(off) t f q g q gs q gd bv dss . bv/ . t j v gs(th) r ds(on) i gss i dss v v/ % v na # a ) pf ns nc -- -- -- -- -- -- -- -- -- -- -- -- -- v gs =0v,i d =250 # a i d =250 # a see fig 7 v ds =5v,i d =250 # a v gs =20v v gs =-20v v ds =30v - v ds =100v v ds =80v,t a =125 % v gs =10v,i d =1.15a + v ds =40v,i d =1.15a + v dd =50v,i d =9.2a, r g =18 ) see fig 13 +, v ds =80v,v gs =10v, i d =9.2a see fig 6 & fig 12 +, drain-to-source leakage current v gs =0v,v ds =25v,f =1mhz see fig 5 source-drain diode ratings and characteristics continuous source current pulsed-source current & diode forward voltage + reverse recovery time reverse recovery charge i s i sm v sd t rr q rr characteristic symbol max. units typ. min. test condition -- -- -- -- -- a v ns # c integral reverse pn-diode in the mosfet t j =25 % ,i s =2.3a,v gs =0v t j =25 % ,i f =9.2a di f /dt=100a/ # s + s IRFM120A 2014-8-8 2 www.kersemi.com
246810 10 -1 10 0 10 1 25 o c 150 o c - 55 o c @ notes : 1. v gs = 0 v 2. v ds = 40 v 3. 250 " s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 10203040 0.0 0.1 0.2 0.3 0.4 @ note : t j = 25 o c v gs = 20 v v gs = 10 v r ds(on) , [ # ] drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 -1 10 0 10 1 150 o c 25 o c @ notes : 1. v gs = 0 v 2. 250 " s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 0 200 400 600 c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd @ notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 0 5 10 v ds = 80 v v ds = 50 v v ds = 20 v @ notes : i d = 9.2 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 0 10 1 @ notes : 1. 250 " s pulse test 2. t a = 25 o c v gs top : 1 5 v 1 0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v i d , drain current [a] v ds , drain-source voltage [v] fig 1. output characteristics fig 2. transfer characteristics fig 6. gate charge vs. gate-source voltage fig 5. capacitance vs. drain-source voltage fig 4. source-drain diode forward voltage fig 3. on-resistance vs. drain current IRFM120A 2014-8-8 3 www.kersemi.com
-75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ notes : 1. v gs = 0 v 2. i d = 250 " a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ notes : 1. v gs = 10 v 2. i d = 4.6 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 " s dc 100 " s 1 ms 10 ms @ notes : 1. t a = 25 o c 2. t j = 150 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t a , ambient temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 single pulse 0.2 0.1 0.01 0.02 0.05 d=0.5 @ notes : 1. z ! ja (t)=52 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t a =p dm *z ! ja (t) z ! ja (t) , thermal response t 1 , square wave pulse duration [sec] fig 7. breakdown voltage vs. temperature fig 8. on-resistance vs. temperature fig 11. thermal response fig 10. max. drain current vs. ambient temperature fig 9. max. safe operating area p dm t 1 t 2 IRFM120A 2014-8-8 4 www.kersemi.com
fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v out 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd vary t p to obtain required peak i d 10v v dd c l l v ds i d r g t p dut bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v out v in r l dut r g 3ma v gs current sampling (i g ) resistor current sampling (i d ) resistor dut v ds 300nf 50k ! 200nf 12v same type as dut * current regulator ? r 1 r 2 IRFM120A 2014-8-8 5 www.kersemi.com
fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + -- l i s driver v gs r g same type as dut v gs ? dv/dt controlled by / g ?i s controlled by duty factor 0 ? v dd 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- IRFM120A 2014-8-8 6 www.kersemi.com
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